Copper Electroplating for 3D TSV

3D integration of integrated circuits requires die-to-die interconnection by TSV with high-density, high-aspect-ratio, and through-chip connections. This results in reduced resistive capacitive delay or RC delay, lower power consumption, improved form factor, heterogeneous integration, and lower manufacturing cost. One of the key technologies in 3D chip staking is the electrochemical copper filling of the TSV.

BASF has focused on these critical fill factors. Our CUPUR® TSV Series formulations ensure a fast, void-free, bottom-up electrochemical copper filling process within TSV features, that delivers a minimum over-plating thickness.