KMSF® 2000 Low Dk/Df
Photo-dielectric
KMSF® 2000 is a negative-tone, low-temperature cure, PPE-copolymer-based photo-dielectric for high reliability heterogeneous design in advanced packaging. It provides a unique advantage offering through its improved pattern resolution, low temperature cure, and robust balance of mechanical and electrical properties. It is designed for an optimal cured film thickness of 5 to 10 μm.
Material Attributes:
· Negative tone, photoimageable dielectric
· 5 to 10 µm film thickness after cure
· Solvent-developable in PGMEA
· I-Line/broadband sensitivity, 1:1 aspect ratio imaging
· Low temperature cure ≤ 200°C
· Low Dk/Df electrical properties
· Low moisture uptake
· Good thermal and chemical stability
Material Uses:
· RDL dielectric
· Passivation and protective layer
· Wafer level packaging
Lithography Process
| Process Steps | Conditions for 5 μm Thick Process with KMSF® 2005 |
Conditions for 10 μm Thick Process with KMSF® 2010 |
| Substrate | 150 and 200 mm Cu wafer | |
| Spin-speed | 2500 rpm/ 30 seconds | 1900 rpm/ 30 seconds |
| Soft Bake | 95°C, 3 minutes (hot plate) | 95°C, 4 minutes (hot plate) |
| Exposure | 250 mJ/cm2 ABM broadband mask aligner with intensity measured at 365 nm |
|
| PEB | 110°C, 2 minutes (hot plate) | |
| Development | PGMEA-based Developer 6 x 60 seconds puddle | |
| Hard Bake | 200°C under nitrogen, 60 minutes | |
Cured Film Properties
| Property | Value | |
| Process | Available Viscosities | ~800 cSt ~1600 cSt |
| Mechanical Properties | Young’s Modulus | 1.6 GPa |
| Tensile Strength | 60 MPa | |
| CTE α1 (<Tg) | 60 ppm/˚C | |
| Elongation | 65% | |
| Residual Stress | 14 MPa | |
| Thermal Properties | Tg (DMA) | 215˚C |
| 5% weight loss temp. in N2 | 390˚C | |
| Electrical Properties | Volume Resistivity | 6.7 x 1016 Ohm·cm |
| Breakdown Voltage | 270 V/µm | |
| Dielectric Constant, (10-50 GHz) |
2.5 | |
| Dissipation Factor, (10-50 GHz) |
0.003 | |
| Water Absorption | Moisture Absorption (23˚C/85% RH, 24 hours) |
0.03% |
Reliability
HAST (PCT): 121ºC/100% RH, 2 atm, 48 hours
BIAS HAST: 85°C/85% RH, 3.3 volts, 168 hours
(5 µm L/S Cu structure)
MODEL
KMSF® 2005
KMSF® 2010
