LOR & PMGI Lift-off Resists
PMGI and LOR resists enable high yield, metal lift-off processing in a variety of applications from data storage and wireless ICs, to MEMS. Used beneath photoresists in a bi-layer stack, PMGI and LOR extend the limits of lift-off processing beyond where single layer resist strategies can reach. This includes very high resolution metallization (<0.25µm), as well as very thick (> 3µm) metallization. These unique materials are available in a variety of formularies to meet virtually any customer need.
Material attributes:
· Won’t intermix when over-coated with imaging resists
· Single step development of bi-layer stack in TMAH, or KOH developers
· High thermal stability: Tg ~190°C
· Removes quickly and cleanly in conventional resist strippers
· Enables sub 0.25µm micron bi-layer resist imaging
· Enables high yield, very thick (>3µm) metal lift-off processing
Material uses:
· Metal lift-off processing
· Airbridge fabrication
· Release layers
Bi-Layer Lift-Off Process
Lift-Off: An enabling, additive lithographic process