UniLOR™ N Single-layer Lift-off Photoresists
UniLOR™ N are chemically amplified, negative-tone resists for single layer lift-off processes.
Material Attributes:
· Negative tone, chemically amplified resists
· 1 to 5 µm film thickness range
· i-Line/Broadband sensitivity, 1:1 aspect ratio capability
· Adjustable sidewall profile angle
· Aqueous alkaline development (standard 0.26N TMAH developers)
· Suitable for metal evaporation physical vapor deposition processes
· Pattern thermal stability up to 200°C
· Clean removal with standard photoresist removal chemistries
· Suitable as top imaging resist in bi-layer lift-off processes
Lithography Process
| Wafer Preparation | 1000 to 4000 rpm/40 seconds |
| Spin Coating | HMDS vapor priming (Si wafer) |
| Film Thickness | 1 to 5 µm |
| Soft Bake | 115°C, 2 minutes (hot plate) |
| Exposure | 260 mJ/cm2 for 3 µm film thickness (adjustable)
ABM Broadband aligner with 360 nm long pass filter Intensity measured at 365 nm |
| PEB | 120°C, 2 minutes (hot plate) |
| Development | Spray develop with 0.26N TMAH Developer 1 x 45 seconds puddle |
Wall Profile Adjustment through Exposure Dose and PEB
3 µm film thickness – 3 µm L&S
High Temperature Bi-Layer Lift-off Processes
Bi-layer resist stack post 200C/1h hot plate bake,
6 µm L/S – 2 µm UniLOR™ N on top of 0.5 µm LOR C
1.98 µm undercut
5000 Å SiO2 sputter deposition
6 µm L/S – 1.5 µm UniLOR™ N on top of 0.5 µm LOR C
2.1 µm undercut
MODEL
SU-8 TF 6000.5
SU-8 TF 6001
SU-8 TF 6002
SU-8 TF 6005
SU-8 TF 6010
