KMPR® 1000
KMPR® 1000 i-Line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH). KMPR® 1000 is designed to coat 4-110 µm in a single step using five standard viscosities.
KMPR® 1000 can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR® 1000 molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR® 1000 will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.
Material attributes:
· High aspect ratio with vertical sidewalls
· High chemical and plasma resistance
· Greater than 100 µm film thickness in a single coat
· Excellent adhesion to metals
· Wet strips in conventional strippers
· Excellent dry etch resistance
Material uses:
· MEMS
· DRIE
· Electroplating
· Permanent Structures
Plating
Permanent
Deep Etch
Plating (100 µm tall Ni posts, KMPR® removed)
Electroformed Ni gear after stripping KMPR®
Source: Univ. of Birmingham
MODEL
KMPR 1005
KMPR 1010
KMPR 1015
KMPR 1025
KMPR 1035
